HEMT (High Electron Mobility Transistor)
GPTKB entity
Statements (44)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:microprocessor
transistor |
| gptkbp:alsoKnownAs |
modulation-doped field-effect transistor
|
| gptkbp:application |
gptkb:radar
satellite communications fiber optic communication cellular base stations |
| gptkbp:category |
transistor
compound semiconductor device |
| gptkbp:feature |
low power consumption
low noise two-dimensional electron gas fast switching speed low voltage operation high gain high linearity high power efficiency high electron mobility high breakdown voltage heterojunction high cutoff frequency high transconductance high-frequency performance low parasitic capacitance |
| https://www.w3.org/2000/01/rdf-schema#label |
HEMT (High Electron Mobility Transistor)
|
| gptkbp:inventedBy |
gptkb:Takashi_Mimura
1980 |
| gptkbp:material |
gptkb:GaN_(Gallium_Nitride)
GaAs (Gallium Arsenide) AlGaAs (Aluminum Gallium Arsenide) InP (Indium Phosphide) |
| gptkbp:relatedTo |
gptkb:battery
gptkb:MESFET gptkb:JFET |
| gptkbp:structure |
gptkb:modulation_doping
heterostructure |
| gptkbp:usedIn |
high-speed digital circuits
radio frequency applications microwave frequency applications low-noise amplifiers |
| gptkbp:bfsParent |
gptkb:ATF36C_series
gptkb:ATF51C_series gptkb:ATF92C_series |
| gptkbp:bfsLayer |
6
|