Statements (19)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:semiconductor_fabrication_technique
|
| gptkbp:appliesTo |
gptkb:III-V_semiconductors
GaAs/AlGaAs systems |
| gptkbp:enables |
two-dimensional electron gas
high electron mobility |
| gptkbp:improves |
carrier mobility
|
| gptkbp:inventedBy |
gptkb:Horst_Störmer
gptkb:Raymond_Dingle 1978 |
| gptkbp:reduces |
scattering
|
| gptkbp:separates |
dopants from charge carriers
|
| gptkbp:used_in |
quantum wells
semiconductor lasers high electron mobility transistors heterostructure devices |
| gptkbp:bfsParent |
gptkb:Heterojunctions_in_Semiconductors
gptkb:HEMT_(High_Electron_Mobility_Transistor) |
| gptkbp:bfsLayer |
7
|
| https://www.w3.org/2000/01/rdf-schema#label |
modulation doping
|