|
gptkbp:instanceOf
|
gptkb:chemical_compound
|
|
gptkbp:bandGap
|
3.4 eV
|
|
gptkbp:CASNumber
|
25617-97-4
|
|
gptkbp:category
|
gptkb:chemical_compound
gptkb:III-V_semiconductor
nitride
gallium compound
wide bandgap material
|
|
gptkbp:chemicalFormula
|
gptkb:GaN
|
|
gptkbp:color
|
white
|
|
gptkbp:containsElement
|
gptkb:gallium
nitrogen
|
|
gptkbp:crystalSystem
|
gptkb:zinc_blende
gptkb:wurtzite
|
|
gptkbp:density
|
6.15 g/cm³
|
|
gptkbp:discoveredIn
|
1930s
|
|
gptkbp:electricalResistivity
|
>10^9 Ω·cm (at 300 K)
|
|
gptkbp:hardness
|
6 (Mohs)
|
|
https://www.w3.org/2000/01/rdf-schema#label
|
GaN (Gallium Nitride)
|
|
gptkbp:meltingPoint
|
>1700 °C
|
|
gptkbp:molecularWeight
|
83.73 g/mol
|
|
gptkbp:solubility
|
insoluble in water
|
|
gptkbp:symbol
|
gptkb:GaN
|
|
gptkbp:thermalConductivity
|
130 W/m·K
|
|
gptkbp:toxicity
|
low
|
|
gptkbp:usedFor
|
gptkb:high_electron_mobility_transistors_(HEMTs)
gptkb:white_LEDs
radar systems
switches
electric vehicles
satellite communications
wireless charging
integrated circuits
optoelectronics
photodetectors
solar inverters
amplifiers
high-frequency devices
high-power devices
fast chargers
microwave transistors
solid-state lighting
ultraviolet LEDs
blue and violet LEDs
|
|
gptkbp:usedIn
|
LEDs
RF components
power electronics
laser diodes
|
|
gptkbp:bfsParent
|
gptkb:HEMT_(High_Electron_Mobility_Transistor)
|
|
gptkbp:bfsLayer
|
7
|