|
gptkbp:instanceOf
|
gptkb:chemical_compound
gptkb:microprocessor
|
|
gptkbp:appearance
|
grayish white solid
|
|
gptkbp:bandGap
|
3.4 eV
|
|
gptkbp:CASNumber
|
25617-97-4
|
|
gptkbp:category
|
gptkb:chemical_compound
gptkb:III-V_semiconductor
nitride
|
|
gptkbp:chemicalFormula
|
gptkb:GaN
|
|
gptkbp:composedOfElement
|
gptkb:gallium
nitrogen
|
|
gptkbp:crystalSystem
|
gptkb:zinc_blende
gptkb:wurtzite
|
|
gptkbp:density
|
6.15 g/cm³
|
|
gptkbp:discoveredIn
|
1930s
|
|
gptkbp:electricalConductivity
|
wide bandgap
high electron mobility
high breakdown voltage
|
|
https://www.w3.org/2000/01/rdf-schema#label
|
GaN
|
|
gptkbp:IUPACName
|
gptkb:gallium_nitride
|
|
gptkbp:meltingPoint
|
>1700 °C (decomposes)
|
|
gptkbp:molecularWeight
|
83.730 g/mol
|
|
gptkbp:solubility
|
insoluble in water
|
|
gptkbp:synthesisType
|
gptkb:metalorganic_chemical_vapor_deposition
ammonolysis of gallium(III) oxide
hydride vapor phase epitaxy
|
|
gptkbp:thermalConductivity
|
130 W/m·K
|
|
gptkbp:toxicity
|
low
|
|
gptkbp:usedIn
|
LEDs
RF components
power electronics
laser diodes
high electron mobility transistors
|
|
gptkbp:bfsParent
|
gptkb:gallium_nitride
|
|
gptkbp:bfsLayer
|
5
|