high electron mobility transistor
GPTKB entity
Statements (32)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
transistor
|
| gptkbp:abbreviation |
HEMT
|
| gptkbp:alsoKnownAs |
heterostructure FET
|
| gptkbp:application |
gptkb:radar
gptkb:RF_amplifiers mobile phones satellite receivers microwave frequency devices |
| gptkbp:category |
microwave technology
compound semiconductor device radio frequency electronics |
| gptkbp:feature |
low noise
high gain high electron mobility high frequency performance |
| gptkbp:field |
gptkb:microprocessor
electronics |
| https://www.w3.org/2000/01/rdf-schema#label |
high electron mobility transistor
|
| gptkbp:introducedIn |
1979
|
| gptkbp:inventedBy |
gptkb:Takashi_Mimura
|
| gptkbp:material |
gptkb:indium_phosphide
gptkb:gallium_arsenide gptkb:gallium_nitride aluminum gallium arsenide |
| gptkbp:relatedTo |
gptkb:battery
gptkb:MESFET gptkb:JFET |
| gptkbp:structure |
heterojunction
|
| gptkbp:type |
transistor
|
| gptkbp:uses |
modulation-doped heterostructure
|
| gptkbp:bfsParent |
gptkb:GaAs_PHEMT
|
| gptkbp:bfsLayer |
7
|