Statements (56)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
thin film deposition technique
|
| gptkbp:abbreviation |
ALD
|
| gptkbp:advantage |
precise thickness control
excellent step coverage high uniformity |
| gptkbp:application |
gptkb:OLEDs
biosensors optical coatings medical devices photodetectors LEDs corrosion protection supercapacitors photovoltaics fuel cells battery electrodes catalyst supports passivation layers protective coatings anti-reflective coatings diffusion barriers gate dielectrics nanolaminates water purification membranes |
| gptkbp:depot |
metals
sulfides oxides nitrides fluorides |
| gptkbp:feature |
conformal coating
atomic scale thickness control layer-by-layer growth self-limiting reactions |
| https://www.w3.org/2000/01/rdf-schema#label |
Atomic Layer Deposition
|
| gptkbp:inventedBy |
gptkb:Tuomo_Suntola
1974 |
| gptkbp:limitation |
precursor availability
slow deposition rate thermal budget constraints |
| gptkbp:precursorType |
gaseous precursors
inorganic precursors metal-organic precursors |
| gptkbp:processor |
vapor phase technique
|
| gptkbp:relatedTo |
gptkb:Molecular_Beam_Epitaxy
gptkb:Physical_Vapor_Deposition Chemical Vapor Deposition |
| gptkbp:usedFor |
gptkb:MEMS
gptkb:nanotechnology microelectronics solar cells semiconductor fabrication energy storage devices barrier layers coating complex surfaces |
| gptkbp:bfsParent |
gptkb:Atomic_Layer_Epitaxy
|
| gptkbp:bfsLayer |
5
|