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gptkbp:instanceOf
|
gptkb:transistor_architecture
|
|
gptkbp:advantage
|
better scalability
higher drive current
lower leakage current
reduced short-channel effects
|
|
gptkbp:alsoKnownAs
|
Fin Field-Effect Transistor
|
|
gptkbp:application
|
gptkb:consumer_electronics
high-performance computing
mobile processors
|
|
gptkbp:category
|
non-planar transistor
multi-gate device
|
|
gptkbp:channelMaterial
|
gptkb:SiGe
silicon
III-V materials
|
|
gptkbp:commercialUse
|
2011
|
|
gptkbp:enables
|
higher transistor density
smaller chip size
|
|
gptkbp:feature
|
multiple gates
3D structure
fin-shaped channel
|
|
gptkbp:firstCommercialUseBy
|
gptkb:Intel
|
|
gptkbp:gateControl
|
improved electrostatic control
|
|
gptkbp:improves
|
energy efficiency
subthreshold slope
switching speed
|
|
gptkbp:introducedIn
|
1999
|
|
gptkbp:inventedBy
|
gptkb:University_of_California,_Berkeley
gptkb:Digh_Hisamoto
|
|
gptkbp:relatedTo
|
gptkb:battery
gptkb:GAAFET
gptkb:trigate_transistor
|
|
gptkbp:replacedBy
|
gptkb:planar_MOSFET
|
|
gptkbp:scalingLimit
|
~5nm node
|
|
gptkbp:structure
|
gate wraps around fin
vertical fin
|
|
gptkbp:successor
|
gptkb:GAAFET
|
|
gptkbp:usedBy
|
gptkb:Samsung
gptkb:Intel
gptkb:TSMC
gptkb:GlobalFoundries
|
|
gptkbp:usedIn
|
gptkb:CMOS_technology
integrated circuits
10nm process
14nm process
7nm process
5nm process
|
|
gptkbp:bfsParent
|
gptkb:planar_MOSFET
|
|
gptkbp:bfsLayer
|
7
|
|
https://www.w3.org/2000/01/rdf-schema#label
|
finFET
|