|
gptkbp:instanceOf
|
gptkb:SDRAM
|
|
gptkbp:advantage
|
random access
execute-in-place (XIP)
higher cost per bit than NAND flash
lower storage density than NAND flash
slower write speed than NAND flash
|
|
gptkbp:cellType
|
gptkb:floating-gate_transistor
|
|
gptkbp:commonPackageTypes
|
gptkb:TSOP
gptkb:SOIC
BGA
WSON
|
|
gptkbp:contrastsWith
|
gptkb:NAND_flash
|
|
gptkbp:dataRetention
|
10-20 years
|
|
gptkbp:endurance
|
10,000 to 100,000 write/erase cycles
|
|
gptkbp:eraseMethod
|
block erase
|
|
https://www.w3.org/2000/01/rdf-schema#label
|
NOR flash
|
|
gptkbp:interface
|
gptkb:serial_(SPI_NOR)
parallel
|
|
gptkbp:introducedIn
|
1988
|
|
gptkbp:inventedBy
|
gptkb:Intel
|
|
gptkbp:marketShareTrend
|
declining
|
|
gptkbp:memoryBusWidth
|
16-bit
32-bit
8-bit
|
|
gptkbp:notableCompany
|
gptkb:Cypress_Semiconductor
gptkb:Macronix
gptkb:Spansion
gptkb:Samsung
gptkb:Intel
gptkb:STMicroelectronics
gptkb:Winbond
Micron
|
|
gptkbp:notableFeature
|
low power consumption
high reliability
direct code execution
|
|
gptkbp:operatingSystem
|
1.8V
3.0V
5.0V
|
|
gptkbp:readBy
|
random access
|
|
gptkbp:replacedBy
|
NAND flash in high-capacity applications
|
|
gptkbp:standardizedBy
|
gptkb:JEDEC
|
|
gptkbp:usedFor
|
gptkb:BIOS_chips
embedded systems
industrial equipment
microcontrollers
cell phones
firmware storage
code storage
|
|
gptkbp:writeMethod
|
byte-level write
|
|
gptkbp:bfsParent
|
gptkb:NAND_flash
gptkb:Disk_On_Chip
gptkb:MRAM
gptkb:DiskOnChip
gptkb:FreeRTOS+FAT
|
|
gptkbp:bfsLayer
|
6
|