Statements (22)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:SDRAM
random-access memory |
| gptkbp:abbreviation |
gptkb:MRAM
|
| gptkbp:advantage |
high endurance
non-volatility fast read/write speeds |
| gptkbp:application |
aerospace
embedded systems data storage automotive electronics industrial systems |
| gptkbp:commercialized_by |
gptkb:Everspin_Technologies
|
| gptkbp:contrastsWith |
gptkb:SDRAM
|
| gptkbp:developedBy |
1990s
|
| https://www.w3.org/2000/01/rdf-schema#label |
magnetoresistive RAM
|
| gptkbp:read/write_mechanism |
magnetoresistance effect
|
| gptkbp:replacedBy |
gptkb:STT-MRAM
|
| gptkbp:stores_data_by |
magnetic states
|
| gptkbp:technology |
spintronics
|
| gptkbp:uses |
magnetic tunnel junctions
|
| gptkbp:bfsParent |
gptkb:3D_XPoint
|
| gptkbp:bfsLayer |
6
|