Statements (37)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:SDRAM
gptkb:magnetoresistive_random-access_memory |
| gptkbp:advantage |
low power consumption
high endurance fast write speed data retention without power |
| gptkbp:application |
cache memory
embedded memory storage class memory |
| gptkbp:canBe |
replacement for DRAM
replacement for NOR Flash replacement for SRAM |
| gptkbp:cellStructure |
magnetic tunnel junction
|
| gptkbp:commercialUse |
gptkb:Samsung
gptkb:TSMC gptkb:GlobalFoundries gptkb:Everspin_Technologies |
| gptkbp:contrastsWith |
gptkb:SDRAM
SRAM Flash memory |
| gptkbp:developedBy |
multiple semiconductor companies
|
| gptkbp:feature |
high speed
radiation hardness CMOS compatibility bit-alterability low standby power |
| gptkbp:firstCommercialProducts |
2018
|
| https://www.w3.org/2000/01/rdf-schema#label |
STT-MRAM
|
| gptkbp:isNonVolatile |
true
|
| gptkbp:readMechanism |
tunneling magnetoresistance
|
| gptkbp:size |
high
|
| gptkbp:standsFor |
Spin-Transfer Torque Magnetoresistive Random-Access Memory
|
| gptkbp:technology |
magnetic tunnel junction
spin-transfer torque |
| gptkbp:writeMechanism |
spin-polarized current
|
| gptkbp:bfsParent |
gptkb:MRAM
|
| gptkbp:bfsLayer |
6
|