High Electron Mobility Transistor
GPTKB entity
Statements (49)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
transistor
|
| gptkbp:abbreviation |
HEMT
|
| gptkbp:alsoKnownAs |
heterostructure FET
modulation-doped FET |
| gptkbp:application |
gptkb:radar
wireless communications satellite communications fiber-optic communication millimeter wave technology cellular base stations power amplifiers low-noise amplifiers |
| gptkbp:category |
gptkb:microprocessor
microwave technology power electronics |
| gptkbp:feature |
low power consumption
low noise two-dimensional electron gas scalable design high gain high-speed operation high electron mobility high breakdown voltage heterojunction high cutoff frequency |
| gptkbp:fieldEffectType |
transistor
|
| https://www.w3.org/2000/01/rdf-schema#label |
High Electron Mobility Transistor
|
| gptkbp:introducedIn |
1979
|
| gptkbp:inventedBy |
gptkb:Takashi_Mimura
|
| gptkbp:material |
gptkb:indium_phosphide
gptkb:gallium_arsenide gptkb:gallium_nitride aluminum gallium arsenide |
| gptkbp:relatedTo |
gptkb:battery
gptkb:MESFET gptkb:JFET transistor pseudomorphic HEMT AlGaN/GaN HEMT metamorphic HEMT |
| gptkbp:uses |
gptkb:radar
gptkb:RF_amplifiers power amplifiers satellite receivers microwave circuits terahertz devices high-frequency applications |
| gptkbp:bfsParent |
gptkb:HEMT
|
| gptkbp:bfsLayer |
7
|