Statements (47)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:microprocessor
transistor |
| gptkbp:abbreviation |
gallium nitride field-effect transistor
|
| gptkbp:advantage |
high efficiency
higher cost complex manufacturing low on-resistance high electron mobility high breakdown voltage |
| gptkbp:contrastsWith |
Si MOSFET
|
| gptkbp:discoveredIn |
1990s
|
| gptkbp:hasApplication |
data centers
electric vehicles wireless charging LED drivers solar inverters 5G base stations motor drives laptop chargers |
| gptkbp:hasChannelMaterial |
gptkb:gallium_nitride
|
| gptkbp:hasFeature |
compact size
thermal stability fast switching speed low gate charge low output capacitance |
| gptkbp:hasGateMaterial |
metal
|
| gptkbp:hasProperty |
normally-off
normally-on |
| gptkbp:hasSubstrateMaterial |
gptkb:jewelry
silicon silicon carbide |
| https://www.w3.org/2000/01/rdf-schema#label |
GaN FET
|
| gptkbp:marketedAs |
gptkb:Texas_Instruments
gptkb:EPC gptkb:Infineon_Technologies gptkb:GaN_Systems Transphorm |
| gptkbp:material |
gptkb:gallium_nitride
|
| gptkbp:operatesIn |
high voltage
high frequency |
| gptkbp:relatedTo |
gptkb:SiC_MOSFET
HEMT |
| gptkbp:usedFor |
power electronics
high-speed switching radio frequency applications |
| gptkbp:bfsParent |
gptkb:GaAs_FET
|
| gptkbp:bfsLayer |
7
|