Statements (35)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:microprocessor
|
| gptkbp:advantage |
lower power consumption
higher speed reduced parasitic capacitance improved radiation hardness |
| gptkbp:alternativeTo |
bulk silicon
|
| gptkbp:application |
mobile devices
servers automotive electronics aerospace electronics |
| gptkbp:category |
microelectronics
semiconductor fabrication |
| gptkbp:developedBy |
gptkb:IBM
gptkb:CEA-Leti |
| gptkbp:fabricationProcess |
gptkb:SIMOX
gptkb:Smart_Cut bond and etch back |
| gptkbp:feature |
buried oxide layer
thin silicon layer insulating substrate |
| https://www.w3.org/2000/01/rdf-schema#label |
SOI (Silicon on Insulator)
|
| gptkbp:introducedIn |
1970s
|
| gptkbp:relatedTo |
gptkb:FD-SOI
fully depleted SOI partially depleted SOI |
| gptkbp:usedBy |
gptkb:IBM
gptkb:AMD gptkb:STMicroelectronics gptkb:GlobalFoundries |
| gptkbp:usedIn |
gptkb:CMOS_technology
microprocessors integrated circuits RF applications |
| gptkbp:bfsParent |
gptkb:IBM_Microelectronics
|
| gptkbp:bfsLayer |
6
|