Statements (50)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:microprocessor
|
| gptkbp:competitor |
BiCMOS technology
GaAs technology |
| gptkbp:dominantIn |
modern digital IC design
|
| gptkbp:enables |
gptkb:Moore's_Law_scaling
high integration density system-on-chip design low-cost mass production |
| gptkbp:fabricatedOn |
silicon wafers
|
| gptkbp:feature |
scalability
high density of logic functions high noise immunity low static power consumption |
| https://www.w3.org/2000/01/rdf-schema#label |
CMOS Technology
|
| gptkbp:inventedBy |
gptkb:Frank_Wanlass
1963 |
| gptkbp:limitation |
short-channel effects
process variability leakage current at small geometries limited analog performance |
| gptkbp:replacedBy |
NMOS technology
PMOS technology |
| gptkbp:standsFor |
gptkb:Complementary_Metal-Oxide-Semiconductor
|
| gptkbp:usedBy |
gptkb:Apple_Inc.
gptkb:Texas_Instruments gptkb:AMD gptkb:Qualcomm gptkb:NVIDIA gptkb:Sony gptkb:Intel gptkb:Samsung_Electronics gptkb:TSMC |
| gptkbp:usedFor |
gptkb:static_RAM
microcontrollers microprocessors digital logic circuits integrated circuit fabrication |
| gptkbp:usedIn |
embedded systems
computers digital cameras mobile phones analog circuits image sensors RF circuits mixed-signal circuits battery-powered devices |
| gptkbp:uses |
gptkb:n-type_MOSFET
gptkb:p-type_MOSFET |
| gptkbp:bfsParent |
gptkb:ATF49C22
|
| gptkbp:bfsLayer |
7
|