Statements (31)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:type_of_random-access_memory
|
| gptkbp:abbreviation |
SRAM
|
| gptkbp:access_time |
very low
|
| gptkbp:cellStructure |
6 transistors per bit
|
| gptkbp:compared_to_DRAM |
no refresh circuitry needed
|
| gptkbp:compatibleWith |
periodic refresh
|
| gptkbp:dataRetention |
as long as power is supplied
|
| gptkbp:fabrication_technology |
gptkb:CMOS
|
| gptkbp:failureMode |
data loss on power off
|
| gptkbp:faster_than |
dynamic RAM
|
| gptkbp:hasNo |
capacitors
|
| gptkbp:inventedBy |
gptkb:Robert_H._Dennard
1963 |
| gptkbp:less_dense_than |
dynamic RAM
|
| gptkbp:more_expensive_than |
dynamic RAM
|
| gptkbp:notRecommendedFor |
main memory in PCs
|
| gptkbp:powerSource |
higher during operation
low at idle |
| gptkbp:stores_data |
using bistable latching circuitry
|
| gptkbp:used_in |
gptkb:CPU_cache
embedded systems network devices FPGAs |
| gptkbp:usedFor |
cache memory
register files small memory banks |
| gptkbp:volatile_memory |
true
|
| gptkbp:bfsParent |
gptkb:CMOS
gptkb:CMOS_technology |
| gptkbp:bfsLayer |
6
|
| http://www.w3.org/2000/01/rdf-schema#label |
static RAM
|