|
gptkbp:instanceOf
|
gptkb:non-volatile_memory_technology
|
|
gptkbp:announced
|
2015
|
|
gptkbp:cellType
|
resistive memory cell
|
|
gptkbp:compatibleWith
|
gptkb:memristor
gptkb:ferroelectric_RAM
gptkb:magnetoresistive_RAM
gptkb:spin-transfer_torque_RAM
charge-trap technology
floating-gate technology
traditional phase-change memory
transistors in memory cell
|
|
gptkbp:competitor
|
gptkb:SDRAM
gptkb:NAND_flash
|
|
gptkbp:density
|
higher than DRAM
|
|
gptkbp:developedBy
|
gptkb:Intel
gptkb:Micron_Technology
|
|
gptkbp:discontinued
|
gptkb:Intel
2022
high production cost
low demand
|
|
gptkbp:endurance
|
higher than NAND flash
|
|
gptkbp:fasterThan
|
gptkb:SDRAM
gptkb:NAND_flash
|
|
gptkbp:firstReleased
|
2017
|
|
gptkbp:intendedUse
|
memory expansion
high-performance storage
|
|
gptkbp:latency
|
lower than NAND flash
|
|
gptkbp:manufacturer
|
gptkb:Intel
gptkb:Micron_Technology
|
|
gptkbp:marketedAs
|
gptkb:Optane
gptkb:QuantX
|
|
gptkbp:nonVolatile
|
true
|
|
gptkbp:notWidelyAdopted
|
true
|
|
gptkbp:patent
|
gptkb:Intel
gptkb:Micron_Technology
|
|
gptkbp:predecessor
|
none
|
|
gptkbp:product
|
gptkb:Intel_Optane_Memory
gptkb:Intel_Optane_SSD
|
|
gptkbp:stackedLayers
|
multiple
|
|
gptkbp:structure
|
crosspoint array
|
|
gptkbp:successor
|
none
|
|
gptkbp:targetMarket
|
data centers
enterprise storage
high-end PCs
|
|
gptkbp:technology
|
solid-state memory
|
|
gptkbp:usedIn
|
gptkb:Intel_Optane_Memory_modules
gptkb:Intel_Optane_SSDs
|
|
gptkbp:uses
|
phase-change memory principles
|
|
gptkbp:bfsParent
|
gptkb:Micron_Technology
|
|
gptkbp:bfsLayer
|
5
|
|
https://www.w3.org/2000/01/rdf-schema#label
|
3D XPoint
|