Statements (29)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:SDRAM
random-access memory |
| gptkbp:abbreviation |
gptkb:FeRAM
|
| gptkbp:advantage |
low power consumption
high endurance fast write speed higher cost than DRAM lower density than flash |
| gptkbp:application |
microcontrollers
smart cards RFID cards industrial electronics |
| gptkbp:contrastsWith |
gptkb:SDRAM
SRAM |
| gptkbp:dataRetention |
10 years or more
|
| gptkbp:developedBy |
gptkb:Ramtron_International
|
| gptkbp:first_commercialized |
1990s
|
| https://www.w3.org/2000/01/rdf-schema#label |
ferroelectric RAM
|
| gptkbp:marketedAs |
gptkb:Fujitsu
gptkb:Texas_Instruments gptkb:Cypress_Semiconductor |
| gptkbp:material |
gptkb:lead_zirconate_titanate
|
| gptkbp:operatingSystem |
low
|
| gptkbp:read_operation |
destructive
|
| gptkbp:stores_data_by |
polarization of ferroelectric material
|
| gptkbp:uses |
ferroelectric layer
|
| gptkbp:write_operation |
non-destructive
|
| gptkbp:bfsParent |
gptkb:3D_XPoint
|
| gptkbp:bfsLayer |
6
|