Statements (29)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:SDRAM
gptkb:magnetoresistive_random-access_memory |
| gptkbp:abbreviation |
gptkb:STT-RAM
|
| gptkbp:advantage |
lower power consumption
faster write speed higher scalability |
| gptkbp:application |
gptkb:storage-class_memory
cache memory embedded memory |
| gptkbp:competitor |
gptkb:SDRAM
phase-change memory |
| gptkbp:contrastsWith |
conventional MRAM
|
| gptkbp:developedBy |
gptkb:IBM
gptkb:Samsung gptkb:Everspin_Technologies |
| gptkbp:feature |
fast switching speed
high endurance data retention at power-off |
| gptkbp:firstDemonstrated |
2008
|
| https://www.w3.org/2000/01/rdf-schema#label |
spin-transfer torque RAM
|
| gptkbp:limitation |
thermal stability
scaling challenges write error rate |
| gptkbp:read_operation |
non-destructive
|
| gptkbp:stores_data_using |
magnetic tunnel junctions
|
| gptkbp:uses |
spin-transfer torque effect
|
| gptkbp:write_operation |
uses spin-polarized current
|
| gptkbp:bfsParent |
gptkb:3D_XPoint
|
| gptkbp:bfsLayer |
6
|