|
gptkbp:instanceOf
|
gptkb:SDRAM
|
|
gptkbp:advantage
|
high density
limited write cycles
data retention issues
low cost per bit
slower write speed than NOR flash
|
|
gptkbp:application
|
gptkb:consumer_electronics
automotive
industrial devices
enterprise storage
|
|
gptkbp:cellType
|
gptkb:QLC
gptkb:PLC
gptkb:MLC
gptkb:SLC
gptkb:TLC
|
|
gptkbp:contrastsWith
|
gptkb:NOR_flash
|
|
gptkbp:dataRetention
|
typically 1-10 years
|
|
gptkbp:endurance
|
typically 1,000 to 100,000 cycles
|
|
gptkbp:eraseMethod
|
gptkb:brick
|
|
https://www.w3.org/2000/01/rdf-schema#label
|
NAND flash
|
|
gptkbp:interface
|
gptkb:ONFI
gptkb:Toggle_DDR
gptkb:UFS
gptkb:eMMC
gptkb:NVMe
|
|
gptkbp:introduced
|
gptkb:Toshiba
|
|
gptkbp:introducedIn
|
1987
|
|
gptkbp:inventedBy
|
gptkb:Fujio_Masuoka
|
|
gptkbp:market
|
dominant in consumer storage
|
|
gptkbp:namedAfter
|
gptkb:NAND_logic_gate
|
|
gptkbp:notableCompany
|
gptkb:Kioxia
gptkb:Western_Digital
gptkb:YMTC
gptkb:Samsung
gptkb:Intel
gptkb:SK_Hynix
Micron
|
|
gptkbp:readBy
|
page
|
|
gptkbp:structure
|
gptkb:floating-gate_transistor
|
|
gptkbp:technology
|
gptkb:EEPROM
|
|
gptkbp:usedIn
|
embedded systems
smartphones
tablets
digital cameras
solid-state drives
USB flash drives
memory cards
|
|
gptkbp:writeMethod
|
page
|
|
gptkbp:bfsParent
|
gptkb:005930_(Samsung_Electronics)
|
|
gptkbp:bfsLayer
|
5
|