magnetoresistive random-access memory

GPTKB entity

Predicate	Object
gptkbp:instanceOf	gptkb:SDRAM
gptkbp:abbreviation	gptkb:MRAM
gptkbp:advantage	low power consumption higher cost high endurance fast read and write speeds
gptkbp:application	aerospace systems cache memory automotive electronics storage devices industrial systems
gptkbp:cellStructure	magnetic tunnel junction
gptkbp:commercialUse	gptkb:Everspin_Technologies
gptkbp:contrastsWith	gptkb:SDRAM SRAM
gptkbp:dataRetention	retains data without power
gptkbp:density	lower than DRAM
gptkbp:developedBy	gptkb:IBM gptkb:Honeywell 1990s
gptkbp:endurance	high
gptkbp:futurePotential	universal memory
https://www.w3.org/2000/01/rdf-schema#label	magnetoresistive random-access memory
gptkbp:marketedAs	2006
gptkbp:readBy	gptkb:fire
gptkbp:replacedBy	gptkb:SDRAM gptkb:NOR_flash gptkb:EEPROM SRAM
gptkbp:size	good
gptkbp:storesDataBy	magnetic states
gptkbp:technology	magnetoresistance
gptkbp:type	spintronic memory
gptkbp:usedIn	embedded systems computers mobile devices
gptkbp:writeMethod	field-induced switching spin-transfer torque
gptkbp:writeSpeed	gptkb:fire
gptkbp:bfsParent	gptkb:spin-transfer_torque_RAM gptkb:Spintronics gptkb:Giant_magnetoresistance_sensor gptkb:STT-MRAM
gptkbp:bfsLayer	7