Statements (21)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:microprocessor
|
| gptkbp:bandStructure |
Fermi level closer to valence band
|
| gptkbp:charge |
hole
|
| gptkbp:commonDopant |
gptkb:gallium
boron indium |
| gptkbp:createdBy |
doping intrinsic semiconductor with trivalent element
|
| gptkbp:dopingElement |
acceptor impurity
|
| gptkbp:electricalConductivity |
increases with temperature
|
| gptkbp:example |
p-type germanium
p-type silicon |
| gptkbp:hasJunctionWith |
n-type semiconductor
|
| https://www.w3.org/2000/01/rdf-schema#label |
p-type semiconductor
|
| gptkbp:majorityCarrier |
hole
|
| gptkbp:minorityCarrier |
electron
|
| gptkbp:symbol |
p
|
| gptkbp:usedIn |
gptkb:LED
solar cell transistor |
| gptkbp:bfsParent |
gptkb:pMOS
|
| gptkbp:bfsLayer |
7
|