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gptkbp:instanceOf
|
transistor type
|
|
gptkbp:commercialUse
|
1964
|
|
gptkbp:complement
|
gptkb:nMOS
|
|
gptkbp:fabricationProcess
|
gptkb:battery
|
|
gptkbp:firstCommercialProduct
|
gptkb:General_Microelectronics_1001_20-bit_shift_register
|
|
gptkbp:fullName
|
gptkb:p-channel_metal-oxide-semiconductor
|
|
gptkbp:gateMaterial
|
metal
|
|
https://www.w3.org/2000/01/rdf-schema#label
|
pMOS
|
|
gptkbp:introducedIn
|
1960
|
|
gptkbp:inventedBy
|
gptkb:Dawon_Kahng
gptkb:Martin_M._Atalla
|
|
gptkbp:level
|
active low
|
|
gptkbp:majorityCarrier
|
hole
|
|
gptkbp:oxideMaterial
|
gptkb:silicon_dioxide
|
|
gptkbp:replacedBy
|
gptkb:CMOS
gptkb:nMOS
|
|
gptkbp:sourceDrainMaterial
|
gptkb:p-type_semiconductor
|
|
gptkbp:symbol
|
gptkb:PMOS
|
|
gptkbp:thresholdVoltage
|
negative
|
|
gptkbp:usedFor
|
microprocessors
analog switches
digital logic circuits
load devices
memory cells
|
|
gptkbp:usedIn
|
gptkb:CMOS_technology
gptkb:EPROMs
early calculators
early integrated circuits
ROMs
|
|
gptkbp:voltageControl
|
negative gate voltage turns on
|
|
gptkbp:YouTubeChannel
|
p-type
|
|
gptkbp:bfsParent
|
gptkb:Intel_4040
|
|
gptkbp:bfsLayer
|
6
|