Statements (30)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
photodiode
|
| gptkbp:application |
medical imaging
laser rangefinders X-ray detection optical power monitoring |
| gptkbp:biasing |
reverse bias
|
| gptkbp:category |
gptkb:microprocessor
optoelectronic device |
| gptkbp:discoveredIn |
1950s
|
| gptkbp:feature |
fast response time
low capacitance high quantum efficiency wide depletion region |
| gptkbp:hasComponent |
gptkb:p-type_semiconductor
n-type semiconductor intrinsic semiconductor |
| https://www.w3.org/2000/01/rdf-schema#label |
PIN photodiode
|
| gptkbp:material |
gptkb:InGaAs
silicon germanium |
| gptkbp:operates |
photovoltaic effect
photoconductive mode |
| gptkbp:relatedTo |
avalanche photodiode
p-n photodiode |
| gptkbp:usedFor |
radiation detection
optical communication fiber optic receivers photodetection |
| gptkbp:bfsParent |
gptkb:Photodiode
|
| gptkbp:bfsLayer |
7
|