Heterojunctions in Semiconductors
GPTKB entity
Statements (46)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
semiconductor device concept
|
| gptkbp:consistsOf |
two different semiconductor materials
|
| gptkbp:enables |
bandgap engineering
enhanced device performance enhanced speed in transistors higher efficiency in optoelectronic devices improved carrier confinement improved thermal stability multi-junction solar cells reduced base resistance in HBTs reduced leakage current tailored electronic properties |
| gptkbp:example |
gptkb:GaAs/AlGaAs_heterojunction
gptkb:InP/InGaAs_heterojunction gptkb:Si/Ge_heterojunction |
| gptkbp:fabricationProcess |
molecular beam epitaxy
metal-organic chemical vapor deposition |
| gptkbp:firstDemonstrated |
1960s
|
| https://www.w3.org/2000/01/rdf-schema#label |
Heterojunctions in Semiconductors
|
| gptkbp:inventedBy |
gptkb:Herbert_Kroemer
gptkb:Zhores_Alferov |
| gptkbp:keyProperty |
band alignment
discontinuity in conduction band discontinuity in valence band |
| gptkbp:NobelPrizeYear |
gptkb:2000_Nobel_Prize_in_Physics
|
| gptkbp:relatedTo |
gptkb:modulation_doping
quantum wells superlattices band offset carrier recombination interface states lattice mismatch |
| gptkbp:type |
broken gap (type III)
staggered gap (type II) straddling gap (type I) |
| gptkbp:usedFor |
gptkb:high_electron_mobility_transistors_(HEMTs)
gptkb:heterojunction_bipolar_transistors_(HBTs) gptkb:tandem_solar_cells photodetectors quantum well lasers |
| gptkbp:usedIn |
lasers
transistors LEDs solar cells |
| gptkbp:bfsParent |
gptkb:Zhores_Alferov
|
| gptkbp:bfsLayer |
5
|