deep ultraviolet lithography (DUV)
GPTKB entity
Statements (29)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
photolithography technology
|
| gptkbp:application |
MEMS fabrication
integrated circuit fabrication photomask production |
| gptkbp:commonWavelengths |
193 nm
248 nm |
| gptkbp:enables |
advanced CMOS technology nodes
sub-100 nm feature sizes |
| gptkbp:hasLighting |
excimer laser
|
| https://www.w3.org/2000/01/rdf-schema#label |
deep ultraviolet lithography (DUV)
|
| gptkbp:key |
fused silica optics
photoresist projection printing step-and-scan |
| gptkbp:mainVendors |
gptkb:Nikon
gptkb:Canon gptkb:ASML |
| gptkbp:predecessor |
gptkb:extreme_ultraviolet_lithography_(EUV)
|
| gptkbp:replacedBy |
gptkb:g-line_lithography
gptkb:i-line_lithography |
| gptkbp:technology |
pre-EUV lithography
|
| gptkbp:usedBy |
gptkb:Samsung
gptkb:Intel gptkb:TSMC gptkb:GlobalFoundries |
| gptkbp:usedIn |
semiconductor manufacturing
|
| gptkbp:wavelengthRange |
200-300 nm
|
| gptkbp:bfsParent |
gptkb:ASML
|
| gptkbp:bfsLayer |
5
|