Statements (13)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
photolithography technique
|
| gptkbp:commonIn |
1980s
|
| https://www.w3.org/2000/01/rdf-schema#label |
g-line lithography
|
| gptkbp:predecessor |
gptkb:i-line_lithography
|
| gptkbp:replacedBy |
deep ultraviolet lithography
|
| gptkbp:resolution_limit |
~0.5 micrometers
|
| gptkbp:used_in |
semiconductor manufacturing
|
| gptkbp:usedFor |
integrated circuit fabrication
|
| gptkbp:uses_light_source |
mercury vapor lamp
|
| gptkbp:uses_light_wavelength |
436 nm
|
| gptkbp:uses_photoresist |
g-line photoresist
|
| gptkbp:bfsParent |
gptkb:deep_ultraviolet_lithography_(DUV)
|
| gptkbp:bfsLayer |
6
|