extreme ultraviolet lithography (EUV)
GPTKB entity
Statements (28)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
lithography technology
|
| gptkbp:abbreviation |
gptkb:EUV
|
| gptkbp:challenge |
high cost
complexity mask defects source power limitations |
| gptkbp:commercialUse |
2019
|
| gptkbp:compatibleWith |
older process nodes
|
| gptkbp:developedBy |
gptkb:ASML
|
| gptkbp:enables |
Moore's Law continuation
3 nm process node 5 nm process node smaller semiconductor features |
| gptkbp:hasLighting |
plasma-based
|
| https://www.w3.org/2000/01/rdf-schema#label |
extreme ultraviolet lithography (EUV)
|
| gptkbp:marketLeaders |
gptkb:ASML
|
| gptkbp:mirrorType |
multilayer mirrors
|
| gptkbp:replacedBy |
gptkb:deep_ultraviolet_lithography_(DUV)
|
| gptkbp:requires |
vacuum environment
special photoresists |
| gptkbp:usedBy |
gptkb:Samsung
gptkb:Intel gptkb:TSMC |
| gptkbp:usedFor |
advanced integrated circuits
|
| gptkbp:usedIn |
semiconductor manufacturing
|
| gptkbp:wavelengthRange |
13.5 nm
|
| gptkbp:bfsParent |
gptkb:ASML
|
| gptkbp:bfsLayer |
5
|