Statements (51)
| Predicate | Object |
|---|---|
| gptkbp:instance_of |
gptkb:Company
|
| gptkbp:bfsLayer |
6
|
| gptkbp:bfsParent |
gptkb:Media_Tek_Dimensity_9200
|
| gptkbp:application |
AI chips
automotive chips |
| gptkbp:competes_with |
Samsung 4nm
|
| gptkbp:contributed_to |
gptkb:Io_T_devices
|
| gptkbp:customer_base |
diverse
|
| gptkbp:customer_support |
gptkb:TV_Show
|
| gptkbp:design |
advanced
|
| gptkbp:developed_by |
gptkb:TSMC
|
| gptkbp:enables |
higher clock speeds
AI acceleration 5 G applications |
| gptkbp:engine |
increased
|
| gptkbp:enhances |
device reliability
chip performance |
| gptkbp:facilitates |
edge computing
|
| gptkbp:features |
higher transistor density
improved power efficiency |
| gptkbp:has_achievements |
higher yield rates
|
| https://www.w3.org/2000/01/rdf-schema#label |
TSMC 4nm
|
| gptkbp:improves |
signal integrity
battery life thermal performance |
| gptkbp:is |
cutting-edge technology
scalable highly competitive in demand future-oriented technology |
| gptkbp:is_adopted_by |
leading tech companies
|
| gptkbp:part_of |
N5 family
|
| gptkbp:performance |
15% over 5nm
|
| gptkbp:power_consumption |
30% compared to 5nm
|
| gptkbp:produced_by |
high
advanced lithography Fin FET |
| gptkbp:production_years |
minimized
|
| gptkbp:provides |
design flexibility
|
| gptkbp:reduces |
manufacturing costs
die size power leakage |
| gptkbp:released_in |
gptkb:2020
|
| gptkbp:successor |
TSMC 5nm
|
| gptkbp:supports |
high-speed interfaces
multiple voltage domains 3 D stacking technology |
| gptkbp:technology |
4nm
|
| gptkbp:used_in |
gptkb:smartphone
high-performance computing |
| gptkbp:utilizes |
EUV lithography
|