Statements (27)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
semiconductor process node
|
| gptkbp:commercialProductionStart |
2021
|
| gptkbp:developedBy |
gptkb:TSMC
|
| gptkbp:energyEfficiency |
improved over 5nm
|
| gptkbp:EUVLithography |
used
|
| gptkbp:fullName |
TSMC 4-nanometer process
|
| https://www.w3.org/2000/01/rdf-schema#label |
TSMC 4nm
|
| gptkbp:improves |
gptkb:TSMC_5nm
|
| gptkbp:locationOfFabs |
gptkb:Taiwan
gptkb:United_States |
| gptkbp:marketedAs |
N4
|
| gptkbp:notableClient |
gptkb:Apple
gptkb:Qualcomm gptkb:MediaTek |
| gptkbp:performanceContext |
improved over 5nm
|
| gptkbp:predecessor |
gptkb:TSMC_3nm
|
| gptkbp:processFamily |
TSMC N4 family
|
| gptkbp:products |
gptkb:Apple_A16_Bionic
gptkb:Qualcomm_Snapdragon_8_Gen_1 |
| gptkbp:size |
4 nanometers
|
| gptkbp:successor |
gptkb:TSMC_5nm
|
| gptkbp:technology |
gptkb:FinFET
|
| gptkbp:transistorDensity |
~137 million transistors/mm²
|
| gptkbp:usedIn |
high-performance computing chips
smartphone chips |
| gptkbp:bfsParent |
gptkb:Snapdragon_8_Gen_3
|
| gptkbp:bfsLayer |
6
|