|
gptkbp:instanceOf
|
gptkb:semiconductor_manufacturing_process
|
|
gptkbp:announced
|
2020
|
|
gptkbp:competitor
|
Intel 3nm (Intel 20A)
Samsung 3nm
|
|
gptkbp:developedBy
|
gptkb:TSMC
|
|
gptkbp:EUVLithography
|
yes
|
|
gptkbp:finFET
|
yes
|
|
gptkbp:mainFabLocation
|
gptkb:Taiwan
|
|
gptkbp:massProductionStart
|
December 2022
|
|
gptkbp:notableClient
|
gptkb:Apple
gptkb:Qualcomm
gptkb:MediaTek
|
|
gptkbp:notableFeature
|
improved energy efficiency
higher transistor density
advanced EUV lithography
finFET architecture
multiple process variants
used in flagship mobile and computing chips
|
|
gptkbp:performanceImprovementComparedTo5nm
|
10-15%
|
|
gptkbp:powerReductionComparedTo5nm
|
25-30%
|
|
gptkbp:predecessor
|
gptkb:TSMC_5nm
|
|
gptkbp:processVariants
|
gptkb:N3X
N3
N3E
N3B
N3P
|
|
gptkbp:successor
|
TSMC 2nm
|
|
gptkbp:technology
|
3 nanometer
|
|
gptkbp:transistorDensity
|
~250 million transistors per mm²
|
|
gptkbp:usedIn
|
gptkb:Apple_M4
gptkb:Qualcomm_Snapdragon_8_Gen_3
gptkb:MediaTek_Dimensity_9300
gptkb:Apple_A17_Pro
gptkb:Apple_M3
|
|
gptkbp:bfsParent
|
gptkb:Apple_M10
|
|
gptkbp:bfsLayer
|
7
|
|
https://www.w3.org/2000/01/rdf-schema#label
|
TSMC 3nm
|