Statements (19)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:semiconductor_manufacturing_process
|
| gptkbp:announced |
2014
|
| gptkbp:developedBy |
gptkb:Samsung_Electronics
|
| gptkbp:feature |
lower power consumption
higher performance 3D transistor structure |
| gptkbp:massProductionStart |
2015
|
| gptkbp:predecessor |
gptkb:Samsung_20nm_process
|
| gptkbp:processNode |
14nm
|
| gptkbp:successor |
gptkb:Samsung_10nm_FinFET
|
| gptkbp:technology |
gptkb:FinFET
|
| gptkbp:usedFor |
gptkb:system-on-chip_(SoC)
mobile processors application processors |
| gptkbp:usedIn |
gptkb:Exynos_7420
gptkb:Qualcomm_Snapdragon_820 |
| gptkbp:bfsParent |
gptkb:Full_Self-Driving_computer
|
| gptkbp:bfsLayer |
6
|
| https://www.w3.org/2000/01/rdf-schema#label |
Samsung 14nm FinFET
|