Statements (20)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:semiconductor_manufacturing_process
|
| gptkbp:announced |
2013
|
| gptkbp:competitor |
TSMC 20nm process
|
| gptkbp:developedBy |
gptkb:Samsung_Electronics
|
| gptkbp:feature |
gptkb:high-k_metal_gate
double patterning lithography planar CMOS technology |
| gptkbp:location |
gptkb:Hwaseong,_South_Korea
|
| gptkbp:massProductionStart |
2014
|
| gptkbp:notableProduct |
gptkb:Apple_A8
Exynos 7 Octa 7420 |
| gptkbp:predecessor |
Samsung 28nm process
|
| gptkbp:successor |
Samsung 14nm process
|
| gptkbp:technology |
20 nanometer
|
| gptkbp:usedFor |
integrated circuits
|
| gptkbp:usedIn |
memory chips
mobile processors |
| gptkbp:bfsParent |
gptkb:Samsung_14nm_FinFET
|
| gptkbp:bfsLayer |
7
|
| http://www.w3.org/2000/01/rdf-schema#label |
Samsung 20nm process
|