Statements (22)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
semiconductor manufacturing process
|
| gptkbp:announced |
2016
|
| gptkbp:application |
gptkb:system-on-chip_(SoC)
mobile processors |
| gptkbp:developedBy |
gptkb:Samsung_Electronics
|
| gptkbp:feature |
improved performance
lower power consumption improved energy efficiency higher transistor density EUV lithography not used smaller chip size trigate transistor structure |
| gptkbp:firstMassProduction |
2016
|
| https://www.w3.org/2000/01/rdf-schema#label |
Samsung 10nm FinFET
|
| gptkbp:predecessor |
gptkb:Samsung_14nm_FinFET
|
| gptkbp:processNode |
10nm
|
| gptkbp:successor |
Samsung 8nm FinFET
|
| gptkbp:technology |
gptkb:FinFET
|
| gptkbp:usedIn |
gptkb:Qualcomm_Snapdragon_835
Exynos 9 Series (8895) |
| gptkbp:bfsParent |
gptkb:Samsung_14nm_FinFET
|
| gptkbp:bfsLayer |
7
|