Statements (28)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
chemical vapor deposition technique
|
| gptkbp:advantage |
good step coverage
high temperature requirement possible thermal damage to substrates uniform film deposition |
| gptkbp:depositsMaterial |
gptkb:silicon_dioxide
gptkb:polysilicon gptkb:silicon_nitride tungsten carbon nanotubes |
| https://www.w3.org/2000/01/rdf-schema#label |
thermal CVD
|
| gptkbp:operates |
thermal decomposition of precursor gases
|
| gptkbp:precursorState |
gptkb:gasoline
|
| gptkbp:relatedTo |
low-pressure CVD
metal-organic CVD plasma-enhanced CVD |
| gptkbp:requires |
high temperature
|
| gptkbp:substrate |
gptkb:glass
metals silicon |
| gptkbp:usedFor |
thin film deposition
semiconductor fabrication coating production |
| gptkbp:usedIn |
microelectronics
solar cells MEMS fabrication |
| gptkbp:bfsParent |
gptkb:Plasma-Enhanced_CVD_(PECVD)
|
| gptkbp:bfsLayer |
7
|