Statements (26)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
chemical vapor deposition technique
|
| gptkbp:abbreviation |
PECVD
|
| gptkbp:advantage |
good step coverage
high deposition rates lower substrate temperatures |
| gptkbp:category |
gptkb:nanotechnology
materials science microfabrication |
| gptkbp:depot |
amorphous silicon films
carbon-based films silicon dioxide films silicon nitride films |
| gptkbp:enables |
lower temperature processing
|
| https://www.w3.org/2000/01/rdf-schema#label |
Plasma-Enhanced CVD
|
| gptkbp:relatedTo |
gptkb:physical_vapor_deposition
gptkb:thermal_CVD atomic layer deposition |
| gptkbp:usedFor |
thin film deposition
semiconductor fabrication solar cell manufacturing coating applications |
| gptkbp:uses |
microwave plasma
plasma to enhance chemical reactions radio frequency (RF) plasma |
| gptkbp:bfsParent |
gptkb:Cold-Wall_CVD
|
| gptkbp:bfsLayer |
7
|