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gptkbp:instanceOf
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Non-volatile memory
Computer memory
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gptkbp:abbreviation
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gptkb:PRAM
gptkb:PCM
PCRAM
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gptkbp:application
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Embedded systems
Solid-state drives
Mobile devices
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gptkbp:cellStructure
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Crossbar array
Mushroom cell
Pore cell
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gptkbp:challenge
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Cost
High write current
Material degradation
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gptkbp:competitor
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gptkb:ReRAM
gptkb:SDRAM
gptkb:MRAM
Flash memory
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gptkbp:data_storage_mechanism
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Electrical resistance
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gptkbp:dataRetention
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Non-volatile
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gptkbp:density
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Higher than DRAM
Lower than NAND flash
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gptkbp:developedBy
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gptkb:Stanford_R._Ovshinsky
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gptkbp:first_commercial_product
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Samsung 512Mb PRAM (2010)
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gptkbp:first_commercialized_by
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gptkb:Intel
gptkb:Samsung_Electronics
gptkb:Micron_Technology
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https://www.w3.org/2000/01/rdf-schema#label
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Phase-change memory
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gptkbp:inventedBy
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1960s
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gptkbp:marketedAs
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Storage-class memory
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gptkbp:material
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Chalcogenide glass
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gptkbp:phase_states
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gptkb:Crystalline
gptkb:Amorphous
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gptkbp:read_mechanism
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Low voltage
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gptkbp:read_speed
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Comparable to DRAM
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gptkbp:researchInterest
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Endurance improvement
Multi-level cell
Scaling down cell size
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gptkbp:retention_time
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Years
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gptkbp:size
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Good
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gptkbp:standardizedBy
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gptkb:JEDEC
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gptkbp:stores_data_by
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Changing phase of material
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gptkbp:technology
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gptkb:3D_XPoint
gptkb:Optane
Ovonic Unified Memory
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gptkbp:write_endurance
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Higher than flash memory
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gptkbp:write_mechanism
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High voltage pulse
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gptkbp:write_speed
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Slower than DRAM
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gptkbp:bfsParent
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gptkb:Sentaurus
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gptkbp:bfsLayer
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7
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