Statements (33)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
transistor
|
| gptkbp:advantage |
higher cost
low distortion better performance at high frequencies high speed response more complex fabrication |
| gptkbp:discoveredIn |
1950s
|
| gptkbp:hasComponent |
gptkb:p-type_semiconductor
n-type semiconductor intrinsic semiconductor |
| gptkbp:hasProperty |
fast switching
low capacitance high breakdown voltage |
| https://www.w3.org/2000/01/rdf-schema#label |
PIN diode
|
| gptkbp:operates |
injection of carriers into intrinsic region
|
| gptkbp:relatedTo |
photodiode
Schottky diode avalanche diode |
| gptkbp:symbol |
standard diode symbol with 'PIN' label
|
| gptkbp:usedFor |
modulation
optical communication microwave circuits current steering signal limiting voltage variable resistor |
| gptkbp:usedIn |
photodetectors
power electronics RF switches attenuators high-frequency applications |
| gptkbp:bfsParent |
gptkb:Jun-ichi_Nishizawa
gptkb:Varicap_diode |
| gptkbp:bfsLayer |
8
|