Statements (41)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:microprocessor
|
| gptkbp:advantage |
PN junction diode
higher reverse leakage current lower reverse voltage rating |
| gptkbp:alsoKnownAs |
hot-carrier diode
|
| gptkbp:application |
logic circuits
detectors RF mixers clamp diodes power OR-ing power rectifiers reverse current protection solar cell bypass diodes switching regulators voltage clamping |
| gptkbp:category |
semiconductor devices
diodes rectifiers |
| gptkbp:contrastsWith |
PN junction diode
|
| gptkbp:discoveredIn |
1938
|
| gptkbp:forwardVoltageDrop |
0.15–0.45 V
|
| gptkbp:hasComponent |
metal-semiconductor junction
|
| gptkbp:hasProperty |
high efficiency
fast switching speed low forward voltage drop low junction capacitance low reverse recovery time |
| gptkbp:marketedAs |
various semiconductor manufacturers
|
| gptkbp:material |
gptkb:gallium_arsenide
silicon |
| gptkbp:namedAfter |
gptkb:Walter_H._Schottky
|
| gptkbp:symbol |
S with diode symbol
|
| gptkbp:usedFor |
switching power supplies
rectification RF applications clamping solar cell protection voltage protection |
| gptkbp:bfsParent |
gptkb:Walter_Schottky
gptkb:PIN_Diodes |
| gptkbp:bfsLayer |
6
|