P-channel Metal-Oxide-Semiconductor
GPTKB entity
Statements (23)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:transistor_type
|
| gptkbp:abbreviation |
gptkb:PMOS
|
| gptkbp:category |
gptkb:microprocessor
gptkb:transistor |
| gptkbp:charge |
holes
|
| gptkbp:complement |
gptkb:N-channel_Metal-Oxide-Semiconductor
|
| gptkbp:gateMaterial |
gptkb:metal
|
| gptkbp:historicalSignificance |
first MOSFET type used in ICs
|
| gptkbp:introducedIn |
1960
|
| gptkbp:inventedBy |
gptkb:Dawon_Kahng
gptkb:Martin_M._Atalla |
| gptkbp:oxideMaterial |
gptkb:silicon_dioxide
|
| gptkbp:replacedBy |
gptkb:N-channel_MOS
|
| gptkbp:symbol |
PMOS symbol
|
| gptkbp:usedFor |
logic circuits
analog circuits |
| gptkbp:usedIn |
gptkb:CMOS_technology
integrated circuits |
| gptkbp:voltagePolarity |
negative gate voltage turns on
|
| gptkbp:YouTubeChannel |
p-type
|
| gptkbp:bfsParent |
gptkb:PMOS
|
| gptkbp:bfsLayer |
7
|
| https://www.w3.org/2000/01/rdf-schema#label |
P-channel Metal-Oxide-Semiconductor
|