Statements (26)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:transistor
|
| gptkbp:abbreviation |
N-channel metal-oxide-semiconductor
|
| gptkbp:advantage |
faster switching speed
lower on-resistance higher electron mobility |
| gptkbp:controlledBy |
gate voltage
|
| gptkbp:hasComplementaryDevice |
P-channel MOS
|
| gptkbp:hasDrainTerminal |
gptkb:drain
|
| gptkbp:hasGateTerminal |
gptkb:gate
|
| gptkbp:hasMajorityCarrier |
electron
|
| gptkbp:hasSourceTerminal |
source
|
| gptkbp:hasSubstrateTerminal |
body
|
| gptkbp:hasThresholdVoltage |
positive
|
| gptkbp:hasType |
gptkb:depletion-mode_MOSFET
gptkb:enhancement-mode_MOSFET |
| gptkbp:inventedBy |
1960s
|
| gptkbp:polarization |
N-type
|
| gptkbp:symbol |
N-MOSFET symbol
|
| gptkbp:usedIn |
gptkb:CMOS_technology
digital circuits power electronics analog circuits |
| gptkbp:bfsParent |
gptkb:P-channel_Metal-Oxide-Semiconductor
gptkb:TMS9900 |
| gptkbp:bfsLayer |
8
|
| https://www.w3.org/2000/01/rdf-schema#label |
N-channel MOS
|