N-channel Metal-Oxide-Semiconductor
GPTKB entity
Statements (28)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
transistor type
|
| gptkbp:abbreviation |
NMOS
|
| gptkbp:advantage |
faster switching speed
lower on-resistance higher electron mobility |
| gptkbp:category |
gptkb:microprocessor
transistor |
| gptkbp:hasCarrierType |
electron
|
| gptkbp:hasGateMaterial |
gptkb:polysilicon
metal |
| gptkbp:hasInsulator |
gptkb:silicon_dioxide
|
| gptkbp:hasTerminal |
gate
body source drain |
| https://www.w3.org/2000/01/rdf-schema#label |
N-channel Metal-Oxide-Semiconductor
|
| gptkbp:inventedBy |
1960s
|
| gptkbp:polarization |
N-type
|
| gptkbp:relatedTo |
gptkb:CMOS
gptkb:P-channel_Metal-Oxide-Semiconductor |
| gptkbp:substrate |
P-type silicon
|
| gptkbp:usedFor |
amplification
switching |
| gptkbp:usedIn |
gptkb:digital_logic
integrated circuits analog circuits |
| gptkbp:bfsParent |
gptkb:P-channel_Metal-Oxide-Semiconductor
|
| gptkbp:bfsLayer |
8
|