Statements (47)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
transistor
|
| gptkbp:application |
amplifiers
digital circuits motor control RF amplifiers switching power supplies |
| gptkbp:benefits |
high efficiency
fast switching speed thermal runaway sensitivity to static electricity |
| gptkbp:historicalSignificance |
enables miniaturization of circuits
key component in modern electronics critical for digital logic design revolutionized power management widely used in integrated circuits |
| https://www.w3.org/2000/01/rdf-schema#label |
MOSFET
|
| gptkbp:inventor |
gptkb:John_Bardeen
|
| gptkbp:keyIssues |
gate charge
threshold voltage switching losses on-resistance transconductance breakdown voltage drain current gate-source voltage input capacitance output capacitance |
| gptkbp:operationalStatus |
voltage control
|
| gptkbp:packaging |
DPAK
TO-220 SOT-23 SMD TO-247 |
| gptkbp:producedBy |
silicon
gallium nitride silicon carbide |
| gptkbp:relatedPatent |
gptkb:IGBT
FET diode BJT SCR |
| gptkbp:subclass |
gptkb:n-channel_MOSFET
gptkb:p-channel_MOSFET depletion-mode MOSFET enhancement-mode_MOSFET |
| gptkbp:type |
field-effect transistor
|
| gptkbp:usedIn |
power electronics
|