Statements (35)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
Crystal growth technique
|
| gptkbp:enables |
Fabrication of heterostructures
Growth of crystalline layers Production of LEDs Production of laser diodes Production of quantum wells Production of superlattices Production of transistors |
| gptkbp:hasType |
gptkb:Molecular_beam_epitaxy
Heteroepitaxy Homoepitaxy Liquid-phase epitaxy Metalorganic chemical vapor deposition Vapor-phase epitaxy |
| https://www.w3.org/2000/01/rdf-schema#label |
Epitaxy
|
| gptkbp:importantFor |
Integrated circuits
Solar cells Power electronics Photonic devices |
| gptkbp:introducedIn |
20th century
|
| gptkbp:involves |
Deposition of material on substrate
|
| gptkbp:relatedTo |
gptkb:Surface_science
Crystal lattice matching Defect density Lattice mismatch Thin film growth |
| gptkbp:substrate |
gptkb:jewelry
gptkb:Gallium_arsenide Silicon Silicon carbide |
| gptkbp:usedIn |
gptkb:Optoelectronics
Microelectronics Semiconductor manufacturing |
| gptkbp:bfsParent |
gptkb:Liquid_Phase_Epitaxy
|
| gptkbp:bfsLayer |
7
|