Impact Ionization Avalanche Transit-Time Diode
GPTKB entity
Statements (31)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
Electronic component
Semiconductor device |
| gptkbp:abbreviation |
IMPATT diode
|
| gptkbp:application |
Communication systems
Radar Oscillators Transmitters |
| gptkbp:category |
Microwave diode
Negative resistance device |
| gptkbp:discoveredBy |
gptkb:William_Shockley
R. L. Johnston |
| gptkbp:discoveredIn |
1956
|
| gptkbp:feature |
High noise figure
High power output |
| gptkbp:frequency |
3 GHz to 100 GHz
|
| https://www.w3.org/2000/01/rdf-schema#label |
Impact Ionization Avalanche Transit-Time Diode
|
| gptkbp:inventedBy |
gptkb:United_States
|
| gptkbp:material |
gptkb:Gallium_arsenide
Silicon |
| gptkbp:operatesIn |
Microwave frequencies
|
| gptkbp:principle |
Avalanche breakdown
Transit-time effect Impact ionization |
| gptkbp:relatedTo |
gptkb:BARITT_diode
gptkb:Gunn_diode gptkb:TRAPATT_diode Tunnel diode |
| gptkbp:usedFor |
Microwave generation
RF amplification |
| gptkbp:bfsParent |
gptkb:IMPATT_Diode
|
| gptkbp:bfsLayer |
7
|