Statements (23)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:microprocessor
microwave diode |
| gptkbp:advantage |
high efficiency
high phase noise |
| gptkbp:category |
gptkb:microprocessor
active device |
| gptkbp:discoveredIn |
1971
|
| gptkbp:fullName |
TRApped Plasma Avalanche Triggered Transit diode
|
| https://www.w3.org/2000/01/rdf-schema#label |
TRAPATT diode
|
| gptkbp:inventedBy |
Prager, H. F.
|
| gptkbp:material |
gptkb:gallium_arsenide
silicon |
| gptkbp:operatingFrequencyRange |
1 GHz to 100 GHz
|
| gptkbp:principle |
plasma formation
avalanche breakdown |
| gptkbp:relatedTo |
gptkb:Gunn_diode
IMPATT diode |
| gptkbp:usedFor |
RF amplification
microwave generation |
| gptkbp:usedIn |
radar systems
communication transmitters |
| gptkbp:bfsParent |
gptkb:IMPATT_Diode
|
| gptkbp:bfsLayer |
7
|