Statements (33)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
Electrode
Semiconductor device |
| gptkbp:application |
gptkb:synthesizer
gptkb:Amplifier |
| gptkbp:category |
Active device
Microwave diode |
| gptkbp:discoveredBy |
gptkb:William_Shockley
|
| gptkbp:discoveredIn |
1965
|
| gptkbp:feature |
High noise figure
High power capability Negative resistance |
| gptkbp:fullName |
gptkb:Impact_Ionization_Avalanche_Transit-Time_Diode
|
| https://www.w3.org/2000/01/rdf-schema#label |
IMPATT Diode
|
| gptkbp:limitation |
High operating voltage
High phase noise Thermal instability |
| gptkbp:material |
gptkb:Gallium_arsenide
Silicon |
| gptkbp:operatingSystem |
3 GHz to 100 GHz
|
| gptkbp:principle |
Avalanche breakdown
Transit-time effect |
| gptkbp:relatedTo |
gptkb:BARITT_diode
gptkb:Gunn_diode gptkb:TRAPATT_diode |
| gptkbp:structure |
gptkb:p-n_junction
p-i-n junction |
| gptkbp:symbol |
D_impatt
|
| gptkbp:usedFor |
Microwave generation
RF amplification |
| gptkbp:usedIn |
Radar systems
Communication transmitters |
| gptkbp:bfsParent |
gptkb:Microwave_Devices
|
| gptkbp:bfsLayer |
6
|