Statements (20)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:microprocessor
transistor |
| gptkbp:application |
gptkb:radar
communication systems |
| gptkbp:discoveredIn |
1960s
|
| gptkbp:feature |
low noise
lower output power than IMPATT diode used for microwave frequency generation |
| gptkbp:fullName |
Barrier Injection Transit-Time diode
|
| https://www.w3.org/2000/01/rdf-schema#label |
BARITT diode
|
| gptkbp:operates |
injection and transit-time effect
|
| gptkbp:operatingSystem |
1 GHz to 100 GHz
|
| gptkbp:relatedTo |
IMPATT diode
TUNNETT diode |
| gptkbp:structure |
gptkb:p-n_junction
gptkb:Schottky_barrier |
| gptkbp:usedIn |
microwave oscillators
microwave amplifiers |
| gptkbp:bfsParent |
gptkb:IMPATT_Diode
|
| gptkbp:bfsLayer |
7
|