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gptkbp:instanceOf
|
gptkb:microprocessor
|
|
gptkbp:advantage
|
high efficiency at high voltages
latch-up risk
slower than MOSFETs at low voltages
|
|
gptkbp:applicationCurrentRange
|
tens to hundreds of amperes
|
|
gptkbp:applicationVoltageRange
|
hundreds to thousands of volts
|
|
gptkbp:combines
|
BJT output
MOSFET input
|
|
gptkbp:controlledBy
|
voltage at gate
|
|
gptkbp:feature
|
high efficiency
high input impedance
fast switching
low on-state power loss
|
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gptkbp:fullName
|
gptkb:transistor
|
|
gptkbp:introducedIn
|
1980s
|
|
gptkbp:inventedBy
|
gptkb:B._Jayant_Baliga
|
|
gptkbp:mainTerminal
|
gptkb:collector
gptkb:gate
emitter
|
|
gptkbp:marketLeaders
|
gptkb:ABB
gptkb:STMicroelectronics
gptkb:Mitsubishi_Electric
gptkb:Toshiba
gptkb:ON_Semiconductor
gptkb:Fuji_Electric
gptkb:Infineon_Technologies
|
|
gptkbp:relatedTo
|
gptkb:battery
gptkb:SCR
gptkb:BJT
thyristor
|
|
gptkbp:symbol
|
three-terminal device
|
|
gptkbp:type
|
gptkb:model
discrete
through-hole
surface mount
|
|
gptkbp:usedFor
|
amplification
pulse-width modulation
switching applications
AC-DC conversion
DC-AC conversion
DC-DC conversion
|
|
gptkbp:usedIn
|
electric vehicles
power electronics
industrial control
renewable energy systems
switching power supplies
inverters
motor drives
traction systems
|
|
gptkbp:bfsParent
|
gptkb:Sentaurus
gptkb:AEC-Q101_Rev_H
gptkb:EiceDRIVER_ICs
|
|
gptkbp:bfsLayer
|
7
|
|
https://www.w3.org/2000/01/rdf-schema#label
|
IGBTs
|