Statements (52)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:microprocessor
|
| gptkbp:advantage |
high efficiency at high voltages
latch-up risk slower than MOSFETs at low voltages |
| gptkbp:applicationCurrentRange |
tens to hundreds of amperes
|
| gptkbp:applicationVoltageRange |
hundreds to thousands of volts
|
| gptkbp:combines |
BJT output
MOSFET input |
| gptkbp:controlledBy |
voltage at gate
|
| gptkbp:feature |
high efficiency
high input impedance fast switching low on-state power loss |
| gptkbp:fullName |
transistor
|
| https://www.w3.org/2000/01/rdf-schema#label |
IGBTs
|
| gptkbp:introducedIn |
1980s
|
| gptkbp:inventedBy |
gptkb:B._Jayant_Baliga
|
| gptkbp:mainTerminal |
collector
gate emitter |
| gptkbp:marketLeaders |
gptkb:ABB
gptkb:STMicroelectronics gptkb:Mitsubishi_Electric gptkb:Toshiba gptkb:ON_Semiconductor gptkb:Fuji_Electric gptkb:Infineon_Technologies |
| gptkbp:relatedTo |
gptkb:battery
gptkb:SCR gptkb:BJT thyristor |
| gptkbp:symbol |
three-terminal device
|
| gptkbp:type |
gptkb:model
discrete through-hole surface mount |
| gptkbp:usedFor |
amplification
pulse-width modulation switching applications AC-DC conversion DC-AC conversion DC-DC conversion |
| gptkbp:usedIn |
electric vehicles
power electronics industrial control renewable energy systems switching power supplies inverters motor drives traction systems |
| gptkbp:bfsParent |
gptkb:TO-247
|
| gptkbp:bfsLayer |
5
|