Statements (21)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:microprocessor
Schottky diode |
| gptkbp:advantage |
higher speed than p-n junction diode
lower capacitance than p-n junction diode |
| gptkbp:hasFeature |
fast switching speed
low forward voltage drop metal–semiconductor junction minority carrier injection is negligible |
| https://www.w3.org/2000/01/rdf-schema#label |
Hot-carrier diode
|
| gptkbp:inventedBy |
20th century
|
| gptkbp:relatedTo |
gptkb:Schottky_barrier
thermionic emission metal–semiconductor contact |
| gptkbp:usedFor |
gptkb:gallium_arsenide
silicon |
| gptkbp:usedIn |
detectors
rectifiers mixers high-frequency applications |
| gptkbp:bfsParent |
gptkb:Schottky_Diodes
|
| gptkbp:bfsLayer |
6
|