Statements (49)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:Electrode
gptkb:Semiconductor_device |
| gptkbp:alsoKnownAs |
gptkb:Hot-carrier_diode
|
| gptkbp:application |
Mixers
Detectors RFID tags Logic circuits Power rectification Solar cell bypass Voltage clamping |
| gptkbp:breakdownVoltage |
Lower than standard diodes
|
| gptkbp:category |
Electronics
Rectifiers Nonlinear devices Semiconductor devices |
| gptkbp:commercialUse |
1960s
|
| gptkbp:discoveredBy |
gptkb:Walter_H._Schottky
|
| gptkbp:feature |
Fast switching speed
High efficiency Low forward voltage drop Low junction capacitance Low power loss Low reverse recovery time |
| gptkbp:forwardVoltageDrop |
0.15 to 0.45 V
|
| gptkbp:hasType |
Metal-semiconductor junction
|
| gptkbp:material |
gptkb:Chromium
gptkb:Gallium_arsenide Platinum Molybdenum Tungsten Silicon |
| gptkbp:namedAfter |
gptkb:Walter_H._Schottky
|
| gptkbp:relatedTo |
gptkb:Schottky_barrier
gptkb:Zener_diode PN junction diode Schottky transistor Tunnel diode |
| gptkbp:reverseLeakageCurrent |
Higher than standard diodes
|
| gptkbp:symbol |
Schematic symbol with S-shaped bar
|
| gptkbp:usedFor |
Rectification
Mixers and detectors Power rectifiers RF applications Solar cell protection Switching power supplies Voltage clamping |
| gptkbp:bfsParent |
gptkb:Microwave_Electronics
|
| gptkbp:bfsLayer |
5
|
| https://www.w3.org/2000/01/rdf-schema#label |
Schottky Diodes
|