heterojunction bipolar transistors (HBTs)
GPTKB entity
Statements (25)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:microprocessor
transistor |
| gptkbp:advantage |
faster switching speed
better thermal stability higher breakdown voltage |
| gptkbp:application |
wireless communications
fiber optic communication satellite communication |
| gptkbp:feature |
low noise
high gain high frequency performance |
| gptkbp:firstDemonstrated |
1980s
|
| https://www.w3.org/2000/01/rdf-schema#label |
heterojunction bipolar transistors (HBTs)
|
| gptkbp:inventedBy |
gptkb:Herbert_Kroemer
|
| gptkbp:material |
gptkb:indium_phosphide
gptkb:gallium_arsenide silicon-germanium |
| gptkbp:subclassOf |
transistor
|
| gptkbp:usedIn |
high-speed digital circuits
radio frequency circuits power amplifiers microwave circuits |
| gptkbp:uses |
heterojunction
|
| gptkbp:bfsParent |
gptkb:Heterojunctions_in_Semiconductors
|
| gptkbp:bfsLayer |
6
|